Voici les caractéristiques des barettes 100% Samsung :  
 
 
Part Number : M368L3223FTN-CCC  
Density(MB) : 256Mo    
Organization : 32Mx64    
Bank/Interface : 4B/SSTL2    
Refresh : 8K/64ms    
Speed : CC,C4,B3,AA,A2,B0    
# of pin : 184    
Power : C,L    
Component Composition : (32Mx8)x8    
Type : DDR400  
Power supply : Vdd: 2.6V ± 0.1V, Vddq: 2.6V ± 0.1V  
Double-data-rate architecture; two data transfers per clock cycle  
Bidirectional data strobe(DQS)  
Differential clock inputs(CK and /CK)  
DLL aligns DQ and DQS transition with CK transition  
Programmable Read latency 3 (clock) for DDR400  
Programmable Burst length (2, 4, 8)  
Programmable Burst type (sequential & interleave)  
Edge aligned data output, center aligned data input  
Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)  
Serial presence detect with EEPROM  
PCB : Height 1,250 (mil), single (256MB), double (512MB) sided  
 
Part Number : M368L6423FTN-CCC  
Density(MB) : 512Mo    
Organization : 64Mx64    
Bank/Interface : 4B/SSTL2    
Refresh : 8K/64ms    
Speed : CC,C4,B3,AA,A2,B0    
# of pin : 184    
Power : C,L    
Component Composition : (32Mx8)x16    
Type : DDR400  
Power supply : Vdd: 2.6V ± 0.1V, Vddq: 2.6V ± 0.1V  
Double-data-rate architecture; two data transfers per clock cycle  
Bidirectional data strobe(DQS)  
Differential clock inputs(CK and /CK)  
DLL aligns DQ and DQS transition with CK transition  
Programmable Read latency 3 (clock) for DDR400  
Programmable Burst length (2, 4, 8)  
Programmable Burst type (sequential & interleave)  
Edge aligned data output, center aligned data input  
Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)  
Serial presence detect with EEPROM  
PCB : Height 1,250 (mil), single (256MB), double (512MB) sided  
 
 
 
vous en pensez du bien ou pas pour les connaisseurs  
a combien ca monter  afin de coupler ave 2*256mo ddr pc3200 EL OCZ